Room temperature ballistic transport in InSb quantum well nanodevices
Abstract
We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in excess of 106 A/cm2. This demonstrates unequivocally that by using effective growth and processing strategies, room temperature ballistic effects can be exploited in InSb/AlInSb QWs at practical device dimensions.
- Publication:
-
Applied Physics Letters
- Pub Date:
- December 2011
- DOI:
- arXiv:
- arXiv:1111.4806
- Bibcode:
- 2011ApPhL..99x2101G
- Keywords:
-
- aluminium compounds;
- ballistic transport;
- current density;
- III-V semiconductors;
- indium compounds;
- mesoscopic systems;
- quantum well devices;
- semiconductor heterojunctions;
- semiconductor quantum wells;
- 85.35.Be;
- Quantum well devices;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- doi:10.1063/1.3668107