Reading and writing charge on graphene devices
Abstract
We use a combination of charge writing and scanning gate microscopy to map and modify the local charge neutrality point of graphene field-effect devices. We give a demonstration of the technique by writing remote charge in a thin dielectric layer over a graphene-metal interface and detecting a shift in the local charge neutrality point. We perform electrostatic simulations to characterize the interaction between a realistic scanning probe tip, the deposited charge, and the graphene and find a good semi-quantitative agreement with the experimental results.
- Publication:
-
Applied Physics Letters
- Pub Date:
- July 2012
- DOI:
- 10.1063/1.4732802
- arXiv:
- arXiv:1111.0560
- Bibcode:
- 2012ApPhL.101b3505C
- Keywords:
-
- fullerene devices;
- graphene;
- 85.65.+h;
- Molecular electronic devices;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- Appl. Phys. Lett. 101, 023505 (2012)