The influence of anisotropic gate potentials on the phonon induced spin-flip rate in GaAs quantum dots
Abstract
We study the anisotropic orbital effect in the electric field tunability of the phonon induced spin-flip rate in quantum dots (QDs). Our study shows that anisotropic gate potential enhances the spin-flip rate and reduces the level crossing point to a lower QDs radius due to the suppression of the Landé g-factor towards bulk crystal. In the range of 104-106 V/cm, the electric field tunability of the phonon induced spin-flip rate can be manipulated through strong Dresselhaus spin-orbit coupling. These results might assist the development of a spin based solid state quantum computer by manipulating spin-flip rate through spin-orbit coupling in a regime where the g-factor changes its sign.
- Publication:
-
Applied Physics Letters
- Pub Date:
- January 2012
- DOI:
- 10.1063/1.3675620
- arXiv:
- arXiv:1111.0558
- Bibcode:
- 2012ApPhL.100b3108P
- Keywords:
-
- gallium arsenide;
- g-factor;
- III-V semiconductors;
- phonons;
- semiconductor quantum dots;
- spin-orbit interactions;
- 73.21.La;
- 81.05.Ea;
- 81.07.Ta;
- 63.22.-m;
- 71.18.+y;
- 71.70.Ej;
- Quantum dots;
- III-V semiconductors;
- Phonons or vibrational states in low-dimensional structures and nanoscale materials;
- Fermi surface: calculations and measurements;
- effective mass g factor;
- Spin-orbit coupling Zeeman and Stark splitting Jahn-Teller effect;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 4 pages, 3 figures