Strain enhanced electron cooling in a degenerately doped semiconductor
Abstract
Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 μm3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK-258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cooler performance are presented. Further reductions in the minimum temperature are expected if the junction sub-gap leakage and tunnel resistance can be reduced. However, if only tunnel resistance is reduced, Joule heating is predicted to dominate.
- Publication:
-
Applied Physics Letters
- Pub Date:
- December 2011
- DOI:
- 10.1063/1.3670330
- arXiv:
- arXiv:1111.0465
- Bibcode:
- 2011ApPhL..99y1908P
- Keywords:
-
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 3 pages, 5 figures