Single-layer behavior and slow carrier density dynamic of twisted graphene bilayer
Abstract
We report scanning tunneling microscopy and scanning tunneling spectroscopy (STS) of twisted graphene bilayer on SiC substrate. For twist angle ∼4.5°, the Dirac point ED is located about 0.40 eV below the Fermi level EF due to the electron doping at the graphene/SiC interface. We observed an unexpected result that the local Dirac point around a nanoscaled defect shifts towards the Fermi energy during the STS measurements (with a time scale about 100 s). This behavior was attributed to the decoupling between the twisted graphene and the substrate during the measurements, which lowers the carrier density of graphene simultaneously.
- Publication:
-
Applied Physics Letters
- Pub Date:
- February 2012
- DOI:
- 10.1063/1.3691952
- arXiv:
- arXiv:1111.0411
- Bibcode:
- 2012ApPhL.100i1601M
- Keywords:
-
- carrier density;
- Fermi level;
- graphene;
- scanning tunnelling microscopy;
- scanning tunnelling spectroscopy;
- 73.63.-b;
- 61.48.Gh;
- 71.20.Tx;
- 73.22.Pr;
- Electronic transport in nanoscale materials and structures;
- Fullerenes and related materials;
- intercalation compounds;
- Condensed Matter - Strongly Correlated Electrons;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science
- E-Print:
- Appl. Phys. Lett. 100 091601 (2012)