Quantitative study of spin-flip cotunneling transport in a quantum dot

We report detailed transport measurements in a quantum dot in a spin-flip cotunneling regime and quantitatively compare the data to microscopic theory. The quantum dot is fabricated by lateral gating of a GaAs/AlGaAs heterostructure, and the conductance is measured in the presence of an in-plane Zeeman field. We focus on the ratio of the nonlinear conductance values at bias voltages exceeding the Zeeman threshold—a regime that permits a spin flip on the dot—to those below the Zeeman threshold, when the spin flip on the dot is energetically forbidden. The data obtained in three different odd-occupation dot states show good quantitative agreement with the theory with no adjustable parameters. We also compare the theoretical results to the predictions of a phenomenological form used previously for the analysis of nonlinear cotunneling conductance, specifically in the determination of the heterostructure g factor, and find good agreement between the two approaches. The ratio of nonlinear conductance values is found to slightly exceed the theoretically anticipated value and to be nearly independent of dot-lead tunneling coefficient and dot energy level.