Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation
Abstract
The segregation of As+ ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi2-x formation. The same lowering of the effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate annealing temperatures, regardless of the redistribution of As dopants at the ErSi2-x/Si interface. On the other hand, if the implanted dose is slightly enhanced, the annealing temperature required to reach sub-0.12-eV effective SBH can be further reduced. This process enables the formation of very low effective SBH ErSi2-x/n-Si contacts with a low thermal budget.
- Publication:
-
Applied Physics Letters
- Pub Date:
- July 2011
- DOI:
- 10.1063/1.3608159
- arXiv:
- arXiv:1110.5461
- Bibcode:
- 2011ApPhL..99a2110R
- Keywords:
-
- annealing;
- arsenic;
- electrical contacts;
- elemental semiconductors;
- erbium alloys;
- impurity distribution;
- ion implantation;
- Schottky barriers;
- semiconductor-metal boundaries;
- silicon;
- silicon alloys;
- 73.40.Ns;
- 81.40.Gh;
- 73.30.+y;
- 61.72.up;
- 61.72.sh;
- Metal-nonmetal contacts;
- Other heat and thermomechanical treatments;
- Surface double layers Schottky barriers and work functions;
- Other materials;
- Impurity distribution;
- Condensed Matter - Materials Science
- E-Print:
- Applied Physics Letters 99, 012110, 2011