Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width
Abstract
The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for nonsegregated contacts separated by micrometer-sized gaps. Still, an excess of current occurs at low temperature for short contact separations or dopant-segregated contacts when the voltage applied to the device is sufficiently high. From two-dimensional self-consistent nonequilibrium Green's function simulations, the dependence of the Schottky barrier profile on the applied voltage, unaccounted for in usual thermionic-field emission models, is found to be the source of this deviation.
- Publication:
-
Applied Physics Letters
- Pub Date:
- March 2011
- DOI:
- 10.1063/1.3567546
- arXiv:
- arXiv:1110.5437
- Bibcode:
- 2011ApPhL..98k2102R
- Keywords:
-
- field emission;
- Green's function methods;
- MOSFET;
- SCF calculations;
- Schottky barriers;
- segregation;
- silicon;
- tunnelling;
- 73.30.+y;
- 79.70.+q;
- 71.15.Mb;
- Surface double layers Schottky barriers and work functions;
- Field emission ionization evaporation and desorption;
- Density functional theory local density approximation gradient and other corrections;
- Condensed Matter - Materials Science
- E-Print:
- Applied Physics Letters 98, 112102, 2011