Voltage-Driven Versus Current-Driven Spin Torque in Anisotropic Tunneling Junctions
Abstract
Non-equilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form {\bf T}=T_{||}{\bf M}x({\bf z}x{\bf M})+T_{\bot}{\bf z}x{\bf M}, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component, $T_{\bot}$, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque $T_{||}$ emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed.
- Publication:
-
IEEE Transactions on Magnetics
- Pub Date:
- October 2011
- DOI:
- 10.1109/TMAG.2011.2157108
- arXiv:
- arXiv:1110.3491
- Bibcode:
- 2011ITM....47.2735M
- Keywords:
-
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 5 pages, 5 figures