Nonequilibrium conductance of a nanodevice for small bias voltage
Abstract
Using nonequilibrium renormalized perturbation theory, we calculate the retarded and lesser self-energies, the spectral density ρ(ω) near the Fermi energy, and the conductance G through a quantum dot as a function of a small bias voltage V, in the general case of electron-hole asymmetry and intermediate valence. The linear terms in ω and V are given exactly in terms of thermodynamic quantities. When the energies necessary to add the first electron (Ed) and the second one (Ed + U) to the quantum dot are not symmetrically placed around the Fermi level, G has a term linear in V if, in addition, either the voltage drop or the coupling to the leads is not symmetric. The effects of temperature are discussed. The results simplify for a symmetric voltage drop, a situation usual in experiment.
- Publication:
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Journal of Physics Condensed Matter
- Pub Date:
- January 2012
- DOI:
- 10.1088/0953-8984/24/1/015306
- arXiv:
- arXiv:1110.0816
- Bibcode:
- 2012JPCM...24a5306A
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 15 pages in one-column format. 2 figures. Additions: a note at the end, a scheme of the system and some references. Accepted for publication in J. Phys. Condens. Matter