Probing band-tail states in silicon metal-oxide-semiconductor heterostructures with electron spin resonance
Abstract
We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (4.2 K) peak mobilities, our ESR data reveal a significant difference in the Si/SiO2 interface quality of these two devices, specifically an order of magnitude difference in the number of shallow trapped charges at the Si/SiO2 interfaces. Thus, our ESR method allows a quantitative evaluation of the Si/SiO2 interface quality at low electron densities, where conventional mobility measurements are not possible.
- Publication:
-
Applied Physics Letters
- Pub Date:
- January 2012
- DOI:
- 10.1063/1.3675862
- arXiv:
- arXiv:1110.0757
- Bibcode:
- 2012ApPhL.100b3503J
- Keywords:
-
- electron density;
- elemental semiconductors;
- MIS devices;
- paramagnetic resonance;
- silicon;
- silicon compounds;
- 85.30.Tv;
- Field effect devices;
- Condensed Matter - Materials Science;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 6 pages, 3 figures