Antiferromagnetic coupling across silicon regulated by tunneling currents
Abstract
We report on the enhancement of antiferromagnetic coupling in epitaxial Fe/Si/Fe structures by voltage-driven spin-polarized tunneling currents. Using the ballistic electron magnetic microscopy, we established that the hot-electron collector current reflects magnetization alignment and the magnetocurrent exceeds 200% at room temperature. The saturation magnetic field for the collector current corresponding to the parallel alignment of magnetizations rises up with the tunneling current, thus demonstrating stabilization of the antiparallel alignment and increasing antiferromagnetic coupling. We connect the enhancement of antiferromagnetic coupling with local dynamic spin torques mediated by spin-polarized tunneling electrons.
- Publication:
-
Applied Physics Letters
- Pub Date:
- January 2012
- DOI:
- arXiv:
- arXiv:1109.3106
- Bibcode:
- 2012ApPhL.100b2406G
- Keywords:
-
- antiferromagnetic materials;
- ballistic transport;
- elemental semiconductors;
- hot carriers;
- iron;
- magnetisation;
- magnetoresistance;
- semiconductor-metal boundaries;
- silicon;
- spin polarised transport;
- tunnelling;
- 73.40.Ns;
- 75.50.Ee;
- 75.60.Ej;
- 72.20.Ht;
- 72.20.My;
- 72.25.-b;
- Metal-nonmetal contacts;
- Antiferromagnetics;
- Magnetization curves hysteresis Barkhausen and related effects;
- High-field and nonlinear effects;
- Galvanomagnetic and other magnetotransport effects;
- Spin polarized transport;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science
- E-Print:
- Submitted to the Applied Physics Letters Journal