An intrinsic mobility ceiling of Si bulk
Abstract
We compute by Density Functional Theory-Non Equilibrium Green Functions Formalism (DFT-NEGFF) the conductance of bulk Si along different crystallographic directions. We find a ceiling value for the intrinsic mobility of bulk silicon of $8.4\cdot10^6 cm^2/V\cdot s$. We suggest that this result is related to the lowest effective mass of the $<001>$ direction.
- Publication:
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arXiv e-prints
- Pub Date:
- September 2011
- DOI:
- arXiv:
- arXiv:1109.1311
- Bibcode:
- 2011arXiv1109.1311G
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 6 pages, 2 figures