Noncontact dielectric constant metrology of low-k interconnect films using a near-field scanned microwave probe
Abstract
We present a method for noncontact, noninvasive measurements of dielectric constant k of 100-nm- to 1.5-μm-thick blanket low-k interconnect films on up to 300mm in diameter wafers. The method has about 10μm sampling spot size, and provides <0.3% precision and ±2% accuracy for k value. It is based on a microfabricated near-field scanned microwave probe formed by a 4GHz parallel strip transmission line resonator tapered down to a few micron tip size.
- Publication:
-
Applied Physics Letters
- Pub Date:
- May 2006
- DOI:
- arXiv:
- arXiv:1108.2218
- Bibcode:
- 2006ApPhL..88s2906T
- Keywords:
-
- 77.22.Ch;
- 77.55.+f;
- 85.40.Ls;
- 84.40.Az;
- Permittivity;
- Dielectric thin films;
- Metallization contacts interconnects;
- device isolation;
- Waveguides transmission lines striplines;
- Condensed Matter - Materials Science;
- Physics - Instrumentation and Detectors
- E-Print:
- 8 pages, 3 figures