High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects
Abstract
A large magnetoresistance effect is obtained at room-temperature by using p-i-n armchair-graphene-nanoribbon (GNR) heterostructures. The key advantage is the virtual elimination of thermal currents due to the presence of band gaps in the contacts. The current at B = 0 T is greatly decreased while the current at B > 0 T is relatively large due to the band-to-band tunneling effects, resulting in a high magnetoresistance ratio, even at room-temperature. Moreover, we explore the effects of edge-roughness, length, and width of GNR channels on device performance. An increase in edge-roughness and channel length enhances the magnetoresistance ratio while increased channel width can reduce the operating bias.
- Publication:
-
Applied Physics Letters
- Pub Date:
- August 2011
- DOI:
- 10.1063/1.3624459
- arXiv:
- arXiv:1107.5352
- Bibcode:
- 2011ApPhL..99h3107L
- Keywords:
-
- field effect transistors;
- graphene;
- magnetoresistive devices;
- p-n heterojunctions;
- surface roughness;
- tunnelling magnetoresistance;
- 85.70.Kh;
- 85.75.-d;
- 81.05.ue;
- 72.20.My;
- 75.47.-m;
- 85.30.Tv;
- Magnetic thin film devices: magnetic heads;
- domain-motion devices etc.;
- Magnetoelectronics;
- spintronics: devices exploiting spin polarized transport or integrated magnetic fields;
- Galvanomagnetic and other magnetotransport effects;
- Magnetotransport phenomena;
- materials for magnetotransport;
- Field effect devices;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- http://dx.doi.org/10.1063/1.3624459