Hole mediated ferromagnetism in Cu-doped ZnO thin films
Abstract
We report the successful synthesis of ZnO:Cu thin films doped with holes, resulting in room temperature ferromagnetism. Hole doping is achieved by As-diffusion from the GaAs substrate into ZnO films, assisted by thermal annealing. The As-diffusion is probed with the help of x-ray absorption spectra collected at the As K-edge which show enhanced signature of diffusion in the annealed samples. Introduction of holes, due to the As doping, in ZnO films is further evidenced by the Cu L3,2-edge spectra. XMCD and magnetic measurements show that the ferromagnetic interaction between doped Cu ions is enhanced after hole doping.
- Publication:
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arXiv e-prints
- Pub Date:
- June 2011
- DOI:
- 10.48550/arXiv.1106.5831
- arXiv:
- arXiv:1106.5831
- Bibcode:
- 2011arXiv1106.5831P
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 14 pages, 3 figures