Andreev Reflection of Helical Edge Modes in InAs/GaSb Quantum Spin Hall Insulator
Abstract
We present an experimental study of S-N-S junctions, with N being a quantum spin Hall insulator made of InAs/GaSb. A front gate is used to vary the Fermi level into the minigap, where helical edge modes exist [Phys. Rev. Lett. 107, 136603 (2011)PRLTAO0031-900710.1103/PhysRevLett.107.136603]. In this regime we observe a ∼2e2/h Andreev conductance peak, consistent with a perfect Andreev reflection on the helical edge modes predicted by theories. The peak diminishes under a small applied magnetic field due to the breaking of time-reversal symmetry. This work thus demonstrates the helical property of the edge modes in a quantum spin Hall insulator.
- Publication:
-
Physical Review Letters
- Pub Date:
- November 2012
- DOI:
- 10.1103/PhysRevLett.109.186603
- arXiv:
- arXiv:1106.5819
- Bibcode:
- 2012PhRvL.109r6603K
- Keywords:
-
- 72.25.Dc;
- 73.63.Hs;
- 74.45.+c;
- Spin polarized transport in semiconductors;
- Quantum wells;
- Proximity effects;
- Andreev effect;
- SN and SNS junctions;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Superconductivity
- E-Print:
- doi:10.1103/PhysRevLett.109.186603