Spin excitations of the correlated semiconductor FeSi probed by THz radiation

By direct measurements of the complex optical conductivity σ(ν) of FeSi, we have discovered a broad absorption peak centered at frequency ν₀(4.2K)≈32cm^-1 that develops at temperatures below 20 K. This feature is caused by spin-polaronic states formed in the middle of the gap in the electronic density of states. We observe the spin excitations between the electronic levels split by the exchange field of H_e=34±6 T. Spin fluctuations are identified as the main factor determining the formation of the spin polarons and the rich magnetic phase diagram of FeSi.