Laser emission with excitonic gain in a ZnO planar microcavity
Abstract
The lasing operation of a ZnO planar microcavity under optical pumping is demonstrated from T=80 to 300 K. At the laser threshold, the cavity switches from the strong coupling to the weak coupling regime. A gain-related transition, which appears while still observing polariton branches and, thus, with stable excitons, is observed below 240 K. This shows that exciton scattering processes, typical of II-VI semiconductors, are involved in the gain process.
- Publication:
-
Applied Physics Letters
- Pub Date:
- May 2011
- DOI:
- 10.1063/1.3593032
- arXiv:
- arXiv:1106.0183
- Bibcode:
- 2011ApPhL..98u1105G
- Keywords:
-
- excitons;
- II-VI semiconductors;
- microcavity lasers;
- optical pumping;
- polaritons;
- semiconductor lasers;
- wide band gap semiconductors;
- zinc compounds;
- 42.55.Px;
- 42.55.Sa;
- 42.60.By;
- Semiconductor lasers;
- laser diodes;
- Microcavity and microdisk lasers;
- Design of specific laser systems;
- Physics - Optics;
- Condensed Matter - Other Condensed Matter
- E-Print:
- Applied Physics Letters 98, 211105 (2011) 3