Electron- and Hole-Doping Effects on A-Site Ordered NdBaMn2O6
Abstract
We have investigated electron- and hole-doping effects on A-site ordered perovskite manganite NdBaMn2O6, which has the A-type (layered) antiferromagnetic (AFM) ground state. Electrons (holes) are introduced by partial substitution of Ba2+ (Nd3+) with Nd3+ (Ba2+). Electron-doping generates ferromagnetic (FM) clusters in the A-type AFM matrix. With increasing the electron-doping level, the volume fraction of the FM phase or the number of the FM clusters is abruptly increasing. In contrast, the A-type AFM phase is robust against the hole-doping, and no FM correlation is observed in the hole-doped NdBaMn2O6.
- Publication:
-
Journal of the Physical Society of Japan
- Pub Date:
- July 2011
- DOI:
- 10.1143/JPSJ.80.074708
- arXiv:
- arXiv:1105.2366
- Bibcode:
- 2011JPSJ...80g4708M
- Keywords:
-
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- 8 pages, 5 figures, to be published in Journal of the Physical Society of Japan