Balanced superconductor-insulator-superconductor mixer on a 9 µm silicon membrane
Abstract
We present a 380-520 GHz balanced superconductor-insulator-superconductor (SIS) mixer on a single silicon substrate. All radio-frequency (RF) circuit components are fabricated on a 9 µm thick membrane. The intermediate frequency (IF) is separately amplified and combined. The balanced mixer chip, using Nb/Al/Al2O3/Nb SIS junctions, is mounted in a tellurium copper waveguide block at 4.2 K using Au beam lead contacts. We find uncorrected minimum receiver double-sideband noise temperatures of 70 K and a noise suppression of up to 18 dB, measured within a 440-495 GHz RF and a 4-8 GHz IF bandwidth, representing state-of-the-art device performance.
- Publication:
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Superconductor Science Technology
- Pub Date:
- August 2011
- DOI:
- 10.1088/0953-2048/24/8/085012
- arXiv:
- arXiv:1105.1956
- Bibcode:
- 2011SuScT..24h5012W
- Keywords:
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- Physics - Instrumentation and Detectors;
- Condensed Matter - Superconductivity
- E-Print:
- 10 pages, 4 figures, Accepted by Superconductor Science &