Set, Reset, and Retention Times for Ionic and Filamentary Mem-Resistors
Abstract
A dynamic systems model has previously been proposed for mem-resistors based on a driven damped harmonic oscillator differential equation describing electron and ionic depletion widths in a thin semiconductor film. This paper derives equations for set, reset, and retention times based on the previously proposed model. Keywords- mem-resistor, RRAM, ReRAM
- Publication:
-
arXiv e-prints
- Pub Date:
- April 2011
- DOI:
- 10.48550/arXiv.1105.0134
- arXiv:
- arXiv:1105.0134
- Bibcode:
- 2011arXiv1105.0134M
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 5 pages