Nonlinear emission dynamics of a GaAs microcavity with embedded quantum wells
Abstract
The emission dynamics of a GaAs microcavity at different angles of observation with respect to the sample normal under conditions of nonresonant picosecond-pulse excitation is measured. At sufficiently high excitation densities, the decay time of the lower polariton emission increases with the polariton wavevector; at low excitation densities the decay time is independent of the wavevector. The effect of additional nonresonant continuous illumination on the emission originating from the bottom of the lower polariton branch is investigated. The additional illumination leads to a substantial increase in the emission intensity (considerably larger than the intensity of the photoluminescence excited by this illumination alone). This fact is explained in terms of acceleration of the polariton relaxation to the radiative states due to scattering by charge carriers created by the additional illumination. The results obtained show that, at large negative detunings between the photon and exciton modes, polariton-polariton and polariton-free carrier scattering are the main processes responsible for the filling of states near the bottom of the lower polariton branch.
- Publication:
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Journal of Physics Condensed Matter
- Pub Date:
- June 2011
- DOI:
- 10.1088/0953-8984/23/21/215302
- arXiv:
- arXiv:1104.5285
- Bibcode:
- 2011JPCM...23u5302B
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 10 pages, 6 figures. This is an author-created, un-copyedited version of an article accepted for publication in Journal of Physics: Condesed Matter. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it