Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system
Abstract
In this letter we investigated the InAs/InAlAs quantum wires (QWRs) superlattice by optically exciting the structure with near-infrared radiation. By varying the helicity of the radiation at room temperature we observed the circular photogalvanic effect related to the C2v symmetry of the structure, which could be attributed to the formation of a quasi-two-dimensional system underlying in the vicinity of the QWRs pattern. The ratio of Rashba and Dresselhaus terms shows an evolution of the spin-orbit interaction in quasi-two-dimensional structure with the QWR layer deposition thickness.
- Publication:
-
Applied Physics Letters
- Pub Date:
- June 2011
- DOI:
- 10.1063/1.3596467
- arXiv:
- arXiv:1104.4407
- Bibcode:
- 2011ApPhL..98w2116J
- Keywords:
-
- aluminium compounds;
- III-V semiconductors;
- indium compounds;
- infrared spectra;
- molecular beam epitaxial growth;
- photoconductivity;
- photovoltaic effects;
- semiconductor growth;
- semiconductor quantum wires;
- semiconductor superlattices;
- spin-orbit interactions;
- 72.40.+w;
- 78.30.Fs;
- 81.15.Hi;
- 71.70.Ej;
- Photoconduction and photovoltaic effects;
- III-V and II-VI semiconductors;
- Molecular atomic ion and chemical beam epitaxy;
- Spin-orbit coupling Zeeman and Stark splitting Jahn-Teller effect;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 9 pages, 3 figures