Highly p-doped epitaxial graphene obtained by fluorine intercalation
Abstract
We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p ≈4.5×1013 cm-2, equivalent to the location of the Fermi level at 0.79 eV above the Dirac point ED.
- Publication:
-
Applied Physics Letters
- Pub Date:
- May 2011
- DOI:
- 10.1063/1.3586256
- arXiv:
- arXiv:1104.2812
- Bibcode:
- 2011ApPhL..98r4102W
- Keywords:
-
- bonds (chemical);
- Fermi level;
- graphite intercalation compounds;
- hole density;
- semiconductor doping;
- semiconductor epitaxial layers;
- semiconductor growth;
- 68.65.-k;
- 68.55.ag;
- 61.72.up;
- 73.61.Wp;
- Low-dimensional mesoscopic and nanoscale systems: structure and nonelectronic properties;
- Semiconductors;
- Other materials;
- Fullerenes and related materials;
- Condensed Matter - Materials Science
- E-Print:
- 4 pages, 2 figures, in print APL