InAs/GaAs (211)B quantum dots with negligible FSS for the generation of entangled photons

Polarization-resolved single dot spectroscopy performed on (211)B InAs/GaAs quantum dots reveals that the fine structure splitting of the excitonic levels in these dots is much lower compared to the usual (100)-grown InAs dots. Time-resolved measurements confirm the high oscillator strength of these dots, and thus their good quantum efficiency at 4 K, comparable with that of (100) InAs/GaAs dots. Last, photon correlation measurements demonstrate single photon emission out of the excitonic optical transition of these dots. All these features make this novel dot system very promising for implementing solid-state entangled photon sources.