Local electrical stress-induced doping and formation of monolayer graphene P-N junction
Abstract
We demonstrated doping in monolayer graphene via local electrical stressing. The doping, confirmed by the resistance-voltage transfer characteristics of the graphene system, is observed to continuously tunable from N-type to P-type as the electrical stressing level (voltage) increases. Two major physical mechanisms are proposed to interpret the observed phenomena: modifications of surface chemistry for N-type doping (at low-level stressing) and thermally-activated charge transfer from graphene to SiO2 substrate for P-type doping (at high-level stressing). The formation of P-N junction on two-dimensional graphene monolayer is demonstrated with complementary doping based on locally applied electrical stressing.
- Publication:
-
Applied Physics Letters
- Pub Date:
- June 2011
- DOI:
- arXiv:
- arXiv:1103.4568
- Bibcode:
- 2011ApPhL..98x3105Y
- Keywords:
-
- charge exchange;
- doping;
- graphene;
- monolayers;
- p-n junctions;
- surface chemistry;
- 73.40.Lq;
- 61.72.up;
- 82.65.+r;
- 82.30.Fi;
- Other semiconductor-to-semiconductor contacts p-n junctions and heterojunctions;
- Other materials;
- Surface and interface chemistry;
- heterogeneous catalysis at surfaces;
- Ion-molecule ion-ion and charge-transfer reactions;
- Condensed Matter - Materials Science
- E-Print:
- 12 pages, 4 figures