High-κ field-effect transistor with copper-phthalocyanine

The use of SrTiO₃ dielectrics as high-permittivity insulator in organic thin-film field-effect transistors (FET) is evaluated. FETs with sputtered SrTiO₃ and copper-phthalocyanine (CuPc) as semiconducting layer were fabricated. The device preparation was performed in situ in an ultra-high-vacuum chamber system. The dielectric in the transistors had a permittivity of up to 200 which led to low driving voltages of 3 V. The FETs were p-type and reached mobilities of about μ = 1.5 × 10^-3 cm² V^-1 s^-1 and an on/off ratio of 10³. These properties are compared to devices based on other dielectric materials.