Ultrathin MgB2 films fabricated on Al2O3 substrate by hybrid physical-chemical vapor deposition with high Tc and Jc

Ultrathin MgB₂ superconducting films with a thickness down to 7.5 nm are epitaxially grown on (0001) Al₂O₃ substrate by a hybrid physical-chemical vapor deposition method. The films are phase-pure, oxidation-free and continuous. The 7.5 nm thin film shows a T_c(0) of 34 K, which is so far the highest T_c(0) reported in MgB₂ with the same thickness. The critical current density of ultrathin MgB₂ films below 10 nm is demonstrated for the first time as J_c ~ 10⁶ A cm ^{- 2} for the above 7.5 nm sample at 16 K. Our results reveal the excellent superconducting properties of ultrathin MgB₂ films with thicknesses between 7.5 and 40 nm on Al₂O₃ substrate.