Graphene Field Effect Transistors: Diffusion-Drift Theory
Abstract
Based on explicit solution of current continuity equation in the graphene FET's channel the semi-classical diffusion-drift description of the carrier transport and I-V characteristics model has been developed. Role of rechargeable defects (interface traps) near or at the interface between graphene and insulated layers has also described.
- Publication:
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arXiv e-prints
- Pub Date:
- February 2011
- DOI:
- arXiv:
- arXiv:1102.2348
- Bibcode:
- 2011arXiv1102.2348Z
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 24 pages, 13 figures, a chapter in "Graphene, Theory, Research and Applications", INTECH