Determination of the band gap and the split-off band in wurtzite GaAs using Raman and photoluminescence excitation spectroscopy
Abstract
GaAs nanowires with 100% wurtzite structure are synthesized by the vapor-liquid-solid method in a molecular beam epitaxy system, using gold as a catalyst. We use resonant Raman spectroscopy and photoluminescence to determine the position of the crystal-field split-off band of hexagonal wurtzite GaAs. The temperature dependence of this transition enables us to extract the value at 0 K, which is 1.982 eV. Our photoluminescence excitation spectroscopy measurements are consistent with a band gap of wurtzite GaAs below 1.523 eV.
- Publication:
-
Physical Review B
- Pub Date:
- March 2011
- DOI:
- arXiv:
- arXiv:1102.2306
- Bibcode:
- 2011PhRvB..83l5307K
- Keywords:
-
- 78.67.Uh;
- 61.46.Km;
- 63.22.-m;
- Structure of nanowires and nanorods;
- Phonons or vibrational states in low-dimensional structures and nanoscale materials;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- doi:10.1103/PhysRevB.83.125307