Response properties of III-V dilute magnetic semiconductors including disorder, dynamical electron-electron interactions, and band structure effects

A theory of the electronic response in spin and charge disordered media is developed with the particular aim to describe III-V dilute magnetic semiconductors like Ga_1-xMn_xAs. The theory combines a detailed k·p description of the valence-band, in which the itinerant carriers are assumed to reside, with first-principles calculations of disorder contributions using an equation-of-motion approach for the current response function. A fully dynamic treatment of electron-electron interaction is achieved by means of time-dependent density-functional theory. It is found that collective excitations within the valence-band significantly increase the carrier relaxation rate by providing effective channels for momentum relaxation. This modification of the relaxation rate, however, has only a minor impact on the infrared optical conductivity in Ga_1-xMn_xAs, which is mostly determined by the details of the valence-band structure and found to be in agreement with experiment.