Effect of chemical doping on the thermoelectric properties of FeGa3

Thermoelectric properties of the chemically-doped intermetallic narrow-band semiconductor FeGa₃ are reported. The parent compound shows semiconductor-like behavior with a small bandgap (E_g = 0.2 eV), a carrier density of ∼10¹⁸ cm^-3, and a large n-type Seebeck coefficient (S ∼ - 400 μV/K) at room temperature. Hall effect measurements indicate that chemical doping significantly increases the carrier density, resulting in a metallic state, while the Seebeck coefficient still remains fairly large (∼- 150 μV/K). The largest power factor (S²/ρ = 62 μW/m K²) was observed for Fe_0.99Co_0.01(Ga_0.997Ge_0.003)₃, and its corresponding figure of merit (ZT = 1.3 × 10^-2) at 390 K improved by over a factor of 5 from the pure material.