Step bunching-induced vertical lattice mismatch and crystallographic tilt in vicinal BiFeO3(001) films
Abstract
Epitaxial (001) BiFeO3 thin films grown on vicinal SrTiO3 substrates are under large anisotropic stress from the substrates. The variations of the crystallographic tilt angle and the c lattice constant, caused by the lattice mismatch, along the film thickness were analyzed quantitatively using the x-ray diffraction technique. By generalizing the Nagai model, we estimated how step bunching resulted in the vertical lattice mismatch between adjacent BiFeO3 layers, which induced the strain relaxation and crystallographic tilt. The step bunching was confirmed by the increased terrace width on the BiFeO3 surface.
- Publication:
-
Applied Physics Letters
- Pub Date:
- January 2011
- DOI:
- arXiv:
- arXiv:1101.0633
- Bibcode:
- 2011ApPhL..98b2904K
- Keywords:
-
- bismuth compounds;
- epitaxial layers;
- lattice constants;
- stress relaxation;
- X-ray diffraction;
- 68.55.-a;
- 68.60.Bs;
- 81.40.Jj;
- 62.40.+i;
- Thin film structure and morphology;
- Mechanical and acoustical properties;
- Elasticity and anelasticity stress-strain relations;
- Anelasticity internal friction stress relaxation and mechanical resonances;
- Condensed Matter - Materials Science
- E-Print:
- 18 pages, 3 figures