Conductivity of graphene on boron nitride substrates
Abstract
We calculate theoretically the disorder-limited conductivity of monolayer and bilayer graphene on hexagonal boron nitride (h-BN) substrates, comparing our theoretical results with the recent experimental results. The comparison leads to a direct quantitative estimate of the underlying disorder strength for both short- and long-range disorder in the graphene on the h-BN system. We find that the good interface quality between graphene and h-BN leads to strongly suppressed charged impurity scattering compared with the corresponding SiO2 substrate case, thus producing very high mobility for the graphene on the h-BN system.
- Publication:
-
Physical Review B
- Pub Date:
- March 2011
- DOI:
- 10.1103/PhysRevB.83.121405
- arXiv:
- arXiv:1101.0299
- Bibcode:
- 2011PhRvB..83l1405D
- Keywords:
-
- 72.80.Vp;
- 81.05.ue;
- 72.10.-d;
- 73.22.Pr;
- Theory of electronic transport;
- scattering mechanisms;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science
- E-Print:
- 5 pages, 4 figures