Increasing the coherence time of single electron spins in diamond by high temperature annealing

Negatively charged nitrogen-vacancy (NV^-) centers in diamond produced by ion implantation often show properties different from NVs created during the crystal growth. We observe that NVs created from nitrogen ion implantation at 30-300 keV show much shorter electron spin coherence time T2 as compared to the "natural" NVs and about 20% of them show switching from NV^- to NV⁰. We show that annealing the diamond at T=1200 °C substantially increases T2 and at the same time the fraction of NVs converting from NV^- to NV⁰ is greatly reduced.