Exploration of the Memory Effect on the Photon-Assisted Tunneling via a Single Quantum Dot:. a Generalized Floquet Theoretical Approach
Abstract
The generalized Floquet approach is developed to study memory effect on electron transport phenomena through a periodically driven single quantum dot in an electrode-multi-level dot-electrode nanoscale quantum device. The memory effect is treated using a multi-function Lorentzian spectral density (LSD) model that mimics the spectral density of each electrode in terms of multiple Lorentzian functions. For the symmetric single-function LSD model involving a single-level dot, the underlying single-particle propagator is shown to be related to a 2×2 effective time-dependent Hamiltonian that includes both the periodic external field and the electrode memory effect. By invoking the generalized Van Vleck (GVV) nearly degenerate perturbation theory, an analytical Tien-Gordon-like expression is derived for arbitrary order multi-photon resonance d.c. tunneling current. Numerically converged simulations and the GVV analytical results are in good agreement, revealing the origin of multi-photon coherent destruction of tunneling and accounting for the suppression of the staircase jumps of d.c. current due to the memory effect. Specially, a novel blockade phenomenon is observed, showing distinctive oscillations in the field-induced current in the large bias voltage limit.
- Publication:
-
International Journal of Modern Physics B
- Pub Date:
- 2011
- DOI:
- 10.1142/S0217979211100989
- arXiv:
- arXiv:1010.5871
- Bibcode:
- 2011IJMPB..25.2251C
- Keywords:
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- Electron transport;
- photon-assisted tunneling;
- generalized Floquet theory;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- doi:10.1142/S0217979211100989