Controlling the effective mass of quantum well states in Pb/Si(111) by interface engineering
Abstract
The in-plane effective mass of quantum well states in thin Pb films on a Bi reconstructed Si(111) surface is studied by angle-resolved photoemission spectroscopy. It is found that this effective mass is a factor of 3 lower than the unusually high values reported for Pb films grown on a Pb reconstructed Si(111) surface. Through a quantitative low-energy electron diffraction analysis the change in effective mass as a function of coverage and for the different interfaces is linked to a change of about 2% in the in-plane lattice constant. To corroborate this correlation, density functional theory calculations are performed on freestanding Pb slabs with different in-plane lattice constants. These calculations show an anomalous dependence of the effective mass on the lattice constant including a change of sign for values close to the lattice constant of Si(111). This unexpected relation is due to a combination of reduced orbital overlap of the 6pz states and altered hybridization between the 6pz and the 6pxy derived quantum well states. Furthermore, it is shown by core-level spectroscopy that the Pb films are structurally and temporally stable at temperatures below 100 K.
- Publication:
-
Physical Review B
- Pub Date:
- January 2011
- DOI:
- 10.1103/PhysRevB.83.035409
- arXiv:
- arXiv:1010.5371
- Bibcode:
- 2011PhRvB..83c5409S
- Keywords:
-
- 73.20.At;
- 73.21.Fg;
- 79.60.Dp;
- Surface states band structure electron density of states;
- Quantum wells;
- Adsorbed layers and thin films;
- Condensed Matter - Materials Science;
- Condensed Matter - Other Condensed Matter
- E-Print:
- 7 pages, 6 figures