Coulomb oscillations of indium-doped ZnO nanowire transistors in a magnetic field
Abstract
We report on the observation of Coulomb oscillations from localized quantum dots superimposed on the normal hopping current in ZnO nanowire transistors. The Coulomb oscillations can be resolved up to 20 K. Positive anisotropic magnetoresistance has been observed due to the Lorentz force on the carrier motion. Magnetic field-induced tunneling barrier transparency results in an increase in oscillation amplitude with increasing magnetic field. The energy shift as a function of magnetic field indicates electron wave function modification in the quantum dots.
- Publication:
-
Physical Review B
- Pub Date:
- November 2010
- DOI:
- 10.1103/PhysRevB.82.195309
- arXiv:
- arXiv:1010.4723
- Bibcode:
- 2010PhRvB..82s5309X
- Keywords:
-
- 73.23.Hk;
- 72.80.Ey;
- 73.63.Nm;
- 85.35.Gv;
- Coulomb blockade;
- single-electron tunneling;
- III-V and II-VI semiconductors;
- Quantum wires;
- Single electron devices;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Quantum Physics
- E-Print:
- 16 pages, 6 figures