Ultrafast carrier and phonon dynamics in Bi2Se3 crystals
Abstract
Ultrafast time-resolved differential reflectivity of Bi2Se3 crystals is studied using optical pump-probe spectroscopy. Three distinct relaxation processes are found to contribute to the initial transient reflectivity changes. The deduced relaxation timescale and the sign of the reflectivity change suggest that electron-phonon interactions and defect-induced charge trapping are the underlying mechanisms for the three processes. After the crystal is exposed to air, the relative strength of these processes is altered and becomes strongly dependent on the excitation photon energy.
- Publication:
-
Applied Physics Letters
- Pub Date:
- November 2010
- DOI:
- 10.1063/1.3513826
- arXiv:
- arXiv:1010.4265
- Bibcode:
- 2010ApPhL..97r2102Q
- Keywords:
-
- bismuth compounds;
- electron traps;
- electron-phonon interactions;
- high-speed optical techniques;
- reflectivity;
- time resolved spectra;
- 63.20.kd;
- 72.20.Jv;
- 78.47.jg;
- 71.38.-k;
- Phonon-electron interactions;
- Charge carriers: generation recombination lifetime and trapping;
- Polarons and electron-phonon interactions;
- Condensed Matter - Materials Science;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 8 pages, 4 figures, accepted for publication in Applied Physics Letters