In-depth analysis of the CuIn1-xGaxSe2 film for solar cells, structural and optical characterization
Abstract
Space-resolved x-ray diffraction measurements of gradient-etched CuIn1-xGaxSe2 (CIGS) solar cells provide information about stress and texture depth profiles in the absorber layer. An important parameter of CIGS layer growth dynamics, the absorber thickness-dependent stress in the molybdenum back contact, is analyzed. Texturing of grains and quality of the polycrystalline absorber layer are correlated with the intentional composition gradients (band gap grading). The band gap gradient is determined by space-resolved photoluminescence measurements and correlated with composition and strain profiles.
- Publication:
-
Applied Physics Letters
- Pub Date:
- December 2010
- DOI:
- 10.1063/1.3529939
- arXiv:
- arXiv:1010.2909
- Bibcode:
- 2010ApPhL..97y1911S
- Keywords:
-
- copper compounds;
- energy gap;
- gallium compounds;
- indium compounds;
- photoluminescence;
- semiconductor thin films;
- solar cells;
- ternary semiconductors;
- texture;
- X-ray diffraction;
- 88.40.jn;
- 78.55.Hx;
- 71.20.Nr;
- 78.66.Li;
- 68.55.jm;
- Other solid inorganic materials;
- Semiconductor compounds;
- Other semiconductors;
- Texture;
- Physics - Optics;
- Condensed Matter - Materials Science
- E-Print:
- Appl. Phys. Lett. 97, 251911 (2010)