Theory of Electron Transport near Anderson-Mott Transitions
Abstract
We present a theory of the DC electron transport in insulators near Anderson-Mott transitions under the influence of coexisting electron correlation and randomness. At sufficiently low temperatures, the DC electron transport in Anderson-Mott insulators is determined by the single-particle density of states (DOS) near the Fermi energy (EF). Anderson insulators, caused by randomness, are characterized by a nonzero DOS at EF. However, recently, the authors proposed that coexisting randomness and short-ranged interaction in insulators open a soft Hubbard gap in the DOS, and the DOS vanishes only at EF. Based on the picture of the soft Hubbard gap, we derive a formula for the critical behavior for the temperature dependence of the DC resistivity. Comparisons of the present theory with experimental results of electrostatic carrier doping into an organic conductor κ-(BEDT-TTF)2Cu[N(CN)2]Br demonstrate the evidence for the present soft-Hubbard scaling.
- Publication:
-
Journal of the Physical Society of Japan
- Pub Date:
- November 2010
- DOI:
- 10.1143/JPSJ.79.113703
- arXiv:
- arXiv:1008.3754
- Bibcode:
- 2010JPSJ...79k3703S
- Keywords:
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- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- 4 pages, 4 figures, 1 table