Tunneling Spin Injection into Single Layer Graphene (Supplementary Information)
Abstract
We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO2 seeded MgO barriers. A non-local magnetoresistance ({\Delta}RNL) of 130 {\Omega} is observed at room temperature, which is the largest value observed in any material. Investigating {\Delta}RNL vs. SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.
- Publication:
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arXiv e-prints
- Pub Date:
- August 2010
- DOI:
- 10.48550/arXiv.1008.3209
- arXiv:
- arXiv:1008.3209
- Bibcode:
- 2010arXiv1008.3209H
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science
- E-Print:
- 5 pages, 2 figures. To appear in Physics Review Letters