Epitaxial EuO thin films on GaAs
Abstract
We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch, it is shown that EuO grows well on MgO(001) with excellent magnetic properties. Epitaxy on GaAs is cube-on-cube and longitudinal magneto-optic Kerr effect measurements demonstrate a large Kerr rotation of 0.57°, a significant remanent magnetization, and a Curie temperature of 69 K.
- Publication:
-
Applied Physics Letters
- Pub Date:
- September 2010
- DOI:
- 10.1063/1.3490649
- arXiv:
- arXiv:1008.0898
- Bibcode:
- 2010ApPhL..97k2509S
- Keywords:
-
- adsorption;
- Curie temperature;
- europium compounds;
- Kerr magneto-optical effect;
- magnetic epitaxial layers;
- molecular beam epitaxial growth;
- remanence;
- 68.55.A-;
- 75.70.Ak;
- 81.15.Hi;
- 78.20.Ls;
- 75.60.Ej;
- 75.30.Kz;
- Nucleation and growth;
- Magnetic properties of monolayers and thin films;
- Molecular atomic ion and chemical beam epitaxy;
- Magnetooptical effects;
- Magnetization curves hysteresis Barkhausen and related effects;
- Magnetic phase boundaries;
- Condensed Matter - Materials Science
- E-Print:
- 5 pages, 3 figures