Few-electron quantum dots in InGaAs quantum wells: Role of fluctuations
Abstract
We study the electron transport properties of gated quantum dots formed in InGaAs/InP quantum well structures grown by chemical-beam epitaxy on prepatterned substrates. Quantum dots form directly underneath narrow gates due to potential fluctuations. We measure the Coulomb-blockade diamonds in the few-electron regime of a single dot and observe photon-assisted tunneling peaks under microwave irradiation. A singlet-triplet transition at high magnetic field and Coulomb-blockade in the quantum Hall regime are also observed.
- Publication:
-
Applied Physics Letters
- Pub Date:
- March 2011
- DOI:
- 10.1063/1.3574540
- arXiv:
- arXiv:1007.4849
- Bibcode:
- 2011ApPhL..98m2107G
- Keywords:
-
- Coulomb blockade;
- diamond;
- elemental semiconductors;
- gallium arsenide;
- III-V semiconductors;
- indium compounds;
- quantum Hall effect;
- semiconductor quantum dots;
- semiconductor quantum wells;
- tunnelling;
- 73.63.Kv;
- 73.63.Hs;
- 73.43.Jn;
- 73.23.Hk;
- Quantum dots;
- Quantum wells;
- Tunneling;
- Coulomb blockade;
- single-electron tunneling;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 3.3 pages, 3 figures. Added two new subfigures, new references, and improved the text