Rectification in three-terminal graphene junctions
Abstract
Nonlinear electrical properties of graphene-based three-terminal nanojunctions are presented. Intrinsic rectification of voltage is observed up to room temperature. The sign and the efficiency of the rectification can be tuned by a gate. Changing the charge carrier type from holes to electrons results in a change in the rectification sign. At a bias <20 mV and at a temperature below 4.2 K the sign and the efficiency of the rectification are governed by universal conductance fluctuations.
- Publication:
-
Applied Physics Letters
- Pub Date:
- July 2010
- DOI:
- 10.1063/1.3464978
- arXiv:
- arXiv:1007.3924
- Bibcode:
- 2010ApPhL..97c2110J
- Keywords:
-
- electric admittance;
- elemental semiconductors;
- fluctuations;
- graphene;
- nanotechnology;
- rectification;
- semiconductor heterojunctions;
- 73.40.Ei;
- 73.61.Wp;
- 73.61.Cw;
- Rectification;
- Fullerenes and related materials;
- Elemental semiconductors;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- Appl. Phys. Lett. 97, 032110 (2010)