Band gap bowing of binary alloys: Experimental results compared to theoretical tight-binding supercell calculations for CdxZn1-xSe
Abstract
Compound semiconductor alloys of the type AxB1-xC find widespread applications as their electronic bulk band gap varies continuously with x , and therefore a tailoring of the energy gap is possible by variation in the concentration. We model the electronic properties of such semiconductor alloys by a multiband sp3 tight-binding model on a finite ensemble of supercells and determine the band gap of the alloy. This treatment allows for an intrinsic reproduction of band bowing effects as a function of the concentration x and is exact in the alloy-induced disorder. In the present paper, we concentrate on bulk CdxZn1-xSe as a well-defined model system and give a careful analysis on the proper choice of the basis set and supercell size, as well as on the necessary number of realizations. The results are compared to experimental results obtained from ellipsometric measurements of CdxZn1-xSe layers prepared by molecular beam epitaxy and photoluminescence measurements on catalytically grown CdxZn1-xSe nanowires reported in the literature.
- Publication:
-
Physical Review B
- Pub Date:
- October 2010
- DOI:
- 10.1103/PhysRevB.82.165204
- arXiv:
- arXiv:1007.2297
- Bibcode:
- 2010PhRvB..82p5204M
- Keywords:
-
- 71.15.Ap;
- 71.20.Nr;
- 71.23.-k;
- 73.61.Ga;
- Basis sets and related methodology;
- Semiconductor compounds;
- Electronic structure of disordered solids;
- II-VI semiconductors;
- Condensed Matter - Materials Science;
- Physics - Computational Physics
- E-Print:
- 7 pages, 6 figures