Hyperfine interactions in silicon quantum dots
Abstract
A fundamental interaction for electrons is their hyperfine interaction (HFI) with nuclear spins. HFI is well characterized in free atoms and molecules, and is crucial for purposes from chemical identification of atoms to trapped ion quantum computing. However, electron wave functions near atomic sites, therefore HFI, are often not accurately known in solids. Here we perform an all-electron calculation for conduction electrons in silicon and obtain reliable information on HFI. We verify the outstanding quantum spin coherence in Si, which is critical for fault-tolerant solid state quantum computing.
- Publication:
-
Physical Review B
- Pub Date:
- April 2011
- DOI:
- 10.1103/PhysRevB.83.165301
- arXiv:
- arXiv:1007.1000
- Bibcode:
- 2011PhRvB..83p5301A
- Keywords:
-
- 76.30.Pk;
- 03.67.Lx;
- 71.15.Mb;
- 71.70.Jp;
- Conduction electrons;
- Quantum computation;
- Density functional theory local density approximation gradient and other corrections;
- Nuclear states and interactions;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Quantum Physics
- E-Print:
- 5 pages, 3 figures, 1 table. Published version