Anholonomic spin manipulation in drift transport in semiconductors
Abstract
We find that the electronic spin rotation induced by drift transport around a closed path in a wide variety of nonmagnetic semiconductors at zero magnetic field depends solely on the physical path taken. Physical paths that produce any possible spin rotation due to transport around a closed path are constructed for electrons experiencing strain or electric fields in (001), (110), or (111)-grown zincblende semiconductor quantum wells. Spin decoherence due to travel along the path is negligible compared to the background spin decoherence rate. The small size of the designed paths (<100 nm scale in GaAs) may lead to applications in nanoscale spintronic circuits.
- Publication:
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arXiv e-prints
- Pub Date:
- July 2010
- DOI:
- 10.48550/arXiv.1007.0909
- arXiv:
- arXiv:1007.0909
- Bibcode:
- 2010arXiv1007.0909M
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 2 figures