Model of tunneling transistors based on graphene on SiC
Abstract
Recent experiments shown that graphene epitaxially grown on Silicon carbide (SiC) can exhibit a energy gap of 0.26 eV, making it a promising material for electronics. With an accurate model, we explore the design parameter space for a fully ballistic graphene-on-SiC tunnel field-effect transistors, and assess the dc and high frequency figures of merit. The steep subthreshold behavior can enable ION/IOFF ratios exceeding 104 even with a low supply voltage of 0.15 V, for devices with gatelength down to 30 nm. Intrinsic transistor delays smaller than 1 ps are obtained. These factors make the device an interesting candidate for low-power nanoelectronics beyond CMOS.
- Publication:
-
Applied Physics Letters
- Pub Date:
- March 2010
- DOI:
- 10.1063/1.3361657
- arXiv:
- arXiv:1006.5878
- Bibcode:
- 2010ApPhL..96m3508M
- Keywords:
-
- energy gap;
- epitaxial growth;
- epitaxial layers;
- field effect transistors;
- graphene;
- nanoelectronics;
- silicon compounds;
- wide band gap semiconductors;
- 85.30.Tv;
- 85.35.-p;
- Field effect devices;
- Nanoelectronic devices;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- Appl. Phys. Lett., 96(13) 133508 (2010)